tft lcd thin film transistor liquid crystal display brands

A thin-film-transistor liquid-crystal display (TFT LCD) is a variant of a liquid-crystal display that uses thin-film-transistor technologyactive matrix LCD, in contrast to passive matrix LCDs or simple, direct-driven (i.e. with segments directly connected to electronics outside the LCD) LCDs with a few segments.

In February 1957, John Wallmark of RCA filed a patent for a thin film MOSFET. Paul K. Weimer, also of RCA implemented Wallmark"s ideas and developed the thin-film transistor (TFT) in 1962, a type of MOSFET distinct from the standard bulk MOSFET. It was made with thin films of cadmium selenide and cadmium sulfide. The idea of a TFT-based liquid-crystal display (LCD) was conceived by Bernard Lechner of RCA Laboratories in 1968. In 1971, Lechner, F. J. Marlowe, E. O. Nester and J. Tults demonstrated a 2-by-18 matrix display driven by a hybrid circuit using the dynamic scattering mode of LCDs.T. Peter Brody, J. A. Asars and G. D. Dixon at Westinghouse Research Laboratories developed a CdSe (cadmium selenide) TFT, which they used to demonstrate the first CdSe thin-film-transistor liquid-crystal display (TFT LCD).active-matrix liquid-crystal display (AM LCD) using CdSe TFTs in 1974, and then Brody coined the term "active matrix" in 1975.high-resolution and high-quality electronic visual display devices use TFT-based active matrix displays.

The liquid crystal displays used in calculators and other devices with similarly simple displays have direct-driven image elements, and therefore a voltage can be easily applied across just one segment of these types of displays without interfering with the other segments. This would be impractical for a large display, because it would have a large number of (color) picture elements (pixels), and thus it would require millions of connections, both top and bottom for each one of the three colors (red, green and blue) of every pixel. To avoid this issue, the pixels are addressed in rows and columns, reducing the connection count from millions down to thousands. The column and row wires attach to transistor switches, one for each pixel. The one-way current passing characteristic of the transistor prevents the charge that is being applied to each pixel from being drained between refreshes to a display"s image. Each pixel is a small capacitor with a layer of insulating liquid crystal sandwiched between transparent conductive ITO layers.

The circuit layout process of a TFT-LCD is very similar to that of semiconductor products. However, rather than fabricating the transistors from silicon, that is formed into a crystalline silicon wafer, they are made from a thin film of amorphous silicon that is deposited on a glass panel. The silicon layer for TFT-LCDs is typically deposited using the PECVD process.

Polycrystalline silicon is sometimes used in displays requiring higher TFT performance. Examples include small high-resolution displays such as those found in projectors or viewfinders. Amorphous silicon-based TFTs are by far the most common, due to their lower production cost, whereas polycrystalline silicon TFTs are more costly and much more difficult to produce.

The twisted nematic display is one of the oldest and frequently cheapest kind of LCD display technologies available. TN displays benefit from fast pixel response times and less smearing than other LCD display technology, but suffer from poor color reproduction and limited viewing angles, especially in the vertical direction. Colors will shift, potentially to the point of completely inverting, when viewed at an angle that is not perpendicular to the display. Modern, high end consumer products have developed methods to overcome the technology"s shortcomings, such as RTC (Response Time Compensation / Overdrive) technologies. Modern TN displays can look significantly better than older TN displays from decades earlier, but overall TN has inferior viewing angles and poor color in comparison to other technology.

Most TN panels can represent colors using only six bits per RGB channel, or 18 bit in total, and are unable to display the 16.7 million color shades (24-bit truecolor) that are available using 24-bit color. Instead, these panels display interpolated 24-bit color using a dithering method that combines adjacent pixels to simulate the desired shade. They can also use a form of temporal dithering called Frame Rate Control (FRC), which cycles between different shades with each new frame to simulate an intermediate shade. Such 18 bit panels with dithering are sometimes advertised as having "16.2 million colors". These color simulation methods are noticeable to many people and highly bothersome to some.gamut (often referred to as a percentage of the NTSC 1953 color gamut) are also due to backlighting technology. It is not uncommon for older displays to range from 10% to 26% of the NTSC color gamut, whereas other kind of displays, utilizing more complicated CCFL or LED phosphor formulations or RGB LED backlights, may extend past 100% of the NTSC color gamut, a difference quite perceivable by the human eye.

The transmittance of a pixel of an LCD panel typically does not change linearly with the applied voltage,sRGB standard for computer monitors requires a specific nonlinear dependence of the amount of emitted light as a function of the RGB value.

In 2004, Hydis Technologies Co., Ltd licensed its AFFS patent to Japan"s Hitachi Displays. Hitachi is using AFFS to manufacture high end panels in their product line. In 2006, Hydis also licensed its AFFS to Sanyo Epson Imaging Devices Corporation.

Less expensive PVA panels often use dithering and FRC, whereas super-PVA (S-PVA) panels all use at least 8 bits per color component and do not use color simulation methods.BRAVIA LCD TVs offer 10-bit and xvYCC color support, for example, the Bravia X4500 series. S-PVA also offers fast response times using modern RTC technologies.

When the field is on, the liquid crystal molecules start to tilt towards the center of the sub-pixels because of the electric field; as a result, a continuous pinwheel alignment (CPA) is formed; the azimuthal angle rotates 360 degrees continuously resulting in an excellent viewing angle. The ASV mode is also called CPA mode.

A technology developed by Samsung is Super PLS, which bears similarities to IPS panels, has wider viewing angles, better image quality, increased brightness, and lower production costs. PLS technology debuted in the PC display market with the release of the Samsung S27A850 and S24A850 monitors in September 2011.

TFT dual-transistor pixel or cell technology is a reflective-display technology for use in very-low-power-consumption applications such as electronic shelf labels (ESL), digital watches, or metering. DTP involves adding a secondary transistor gate in the single TFT cell to maintain the display of a pixel during a period of 1s without loss of image or without degrading the TFT transistors over time. By slowing the refresh rate of the standard frequency from 60 Hz to 1 Hz, DTP claims to increase the power efficiency by multiple orders of magnitude.

Due to the very high cost of building TFT factories, there are few major OEM panel vendors for large display panels. The glass panel suppliers are as follows:

External consumer display devices like a TFT LCD feature one or more analog VGA, DVI, HDMI, or DisplayPort interface, with many featuring a selection of these interfaces. Inside external display devices there is a controller board that will convert the video signal using color mapping and image scaling usually employing the discrete cosine transform (DCT) in order to convert any video source like CVBS, VGA, DVI, HDMI, etc. into digital RGB at the native resolution of the display panel. In a laptop the graphics chip will directly produce a signal suitable for connection to the built-in TFT display. A control mechanism for the backlight is usually included on the same controller board.

The low level interface of STN, DSTN, or TFT display panels use either single ended TTL 5 V signal for older displays or TTL 3.3 V for slightly newer displays that transmits the pixel clock, horizontal sync, vertical sync, digital red, digital green, digital blue in parallel. Some models (for example the AT070TN92) also feature input/display enable, horizontal scan direction and vertical scan direction signals.

New and large (>15") TFT displays often use LVDS signaling that transmits the same contents as the parallel interface (Hsync, Vsync, RGB) but will put control and RGB bits into a number of serial transmission lines synchronized to a clock whose rate is equal to the pixel rate. LVDS transmits seven bits per clock per data line, with six bits being data and one bit used to signal if the other six bits need to be inverted in order to maintain DC balance. Low-cost TFT displays often have three data lines and therefore only directly support 18 bits per pixel. Upscale displays have four or five data lines to support 24 bits per pixel (truecolor) or 30 bits per pixel respectively. Panel manufacturers are slowly replacing LVDS with Internal DisplayPort and Embedded DisplayPort, which allow sixfold reduction of the number of differential pairs.

The bare display panel will only accept a digital video signal at the resolution determined by the panel pixel matrix designed at manufacture. Some screen panels will ignore the LSB bits of the color information to present a consistent interface (8 bit -> 6 bit/color x3).

With analogue signals like VGA, the display controller also needs to perform a high speed analog to digital conversion. With digital input signals like DVI or HDMI some simple reordering of the bits is needed before feeding it to the rescaler if the input resolution doesn"t match the display panel resolution.

The statements are applicable to Merck KGaA as well as its competitors JNC Corporation (formerly Chisso Corporation) and DIC (formerly Dainippon Ink & Chemicals). All three manufacturers have agreed not to introduce any acutely toxic or mutagenic liquid crystals to the market. They cover more than 90 percent of the global liquid crystal market. The remaining market share of liquid crystals, produced primarily in China, consists of older, patent-free substances from the three leading world producers and have already been tested for toxicity by them. As a result, they can also be considered non-toxic.

Kawamoto, H. (2012). "The Inventors of TFT Active-Matrix LCD Receive the 2011 IEEE Nishizawa Medal". Journal of Display Technology. 8 (1): 3–4. Bibcode:2012JDisT...8....3K. doi:10.1109/JDT.2011.2177740. ISSN 1551-319X.

Brody, T. Peter; Asars, J. A.; Dixon, G. D. (November 1973). "A 6 × 6 inch 20 lines-per-inch liquid-crystal display panel". 20 (11): 995–1001. Bibcode:1973ITED...20..995B. doi:10.1109/T-ED.1973.17780. ISSN 0018-9383.

K. H. Lee; H. Y. Kim; K. H. Park; S. J. Jang; I. C. Park & J. Y. Lee (June 2006). "A Novel Outdoor Readability of Portable TFT-LCD with AFFS Technology". SID Symposium Digest of Technical Papers. AIP. 37 (1): 1079–82. doi:10.1889/1.2433159. S2CID 129569963.

Kim, Sae-Bom; Kim, Woong-Ki; Chounlamany, Vanseng; Seo, Jaehwan; Yoo, Jisu; Jo, Hun-Je; Jung, Jinho (15 August 2012). "Identification of multi-level toxicity of liquid crystal display wastewater toward Daphnia magna and Moina macrocopa". Journal of Hazardous Materials. Seoul, Korea; Laos, Lao. 227–228: 327–333. doi:10.1016/j.jhazmat.2012.05.059. PMID 22677053.

Manufacturer of standard & custom touch screen displays & thin film transistor touchscreen monitors. Features include 17 in. to 23 in. LCD, rugged steel & aluminum construction, optional resistive or capacitive touch-screens, light textured powder coated black color, contrast filters, transmissive daylight modification, hard coated vandal shields, 16.7 million display colors, anti-glare hard coating, analog RGB input, weight ranging 13 lbs to 24 lbs & 1280 x 1024 SXGA or 1600 x 1200 UXGA resolution. Applications include use for rack, wall, panel or kiosk installations in commercial, military & broadcast industries. One year limited warranty. RoHS compliant. Meet NEMA & Military Spec.

Besides, the report also helps analyze and identify emerging trends and changing dynamics along with essential drivers, opportunities, challenges, and restraints in the global Thin-Film Transistor Liquid Crystal Display (TFT-LCD) market. The report includes the conceptual analysis of the products, applications, end-user, and regions.

The report on the Global Thin-Film Transistor Liquid Crystal Display (TFT-LCD) market helps to inspect the market based on market share, market description, and size of the market.

The report on the Global Thin-Film Transistor Liquid Crystal Display (TFT-LCD) market helps to analyze the market based on product type, application, and end-users.

A detailed assessment of all risks and opportunities of the Global Thin-Film Transistor Liquid Crystal Display (TFT-LCD) market is mentioned in the report.

1971 – Lechner, F. J. Marlowe, E. O. Nester, and J. Tults demonstrated a 2-by-18 matrix display driven by a hybrid circuit using the dynamic scattering mode of LCDs

2020 – TFT LCD display technology dominants the display market now. Within the last 20 years, it has wiped out the market of CRT (cathode-ray tube) and Plasma. The only challenges are OLED (organic light-emitting diode)and Micro LED (Maybe, still in lab).

TFT LCD Display (Thin-Film-Transistor Liquid Crystal Display) technology has a sandwich-like structure with liquid crystal material filled between two glass plates. Two polarizer filters, color filters (RGB, red/green/blue) and two alignment layers determine exactly the amount of light is allowed to pass and which colors are created.

Each pixel in an active matrix is paired with a transistor that includes a capacitor which gives each sub-pixel the ability to retain its charge, instead of requiring an electrical charge sent each time it needed to be changed.  The TFT layer controls light flow a color filter displays the color and a top layer houses your visible screen.

Utilizing an electrical charge that causes the liquid crystal material to change their molecular structure allowing various wavelengths of backlight to “pass-through”. The active matrix of the TFT display is in constant flux and changes or refreshes rapidly depending upon the incoming signal from the control device.

The pixels of TFT displays are determined by the underlying density (resolution) of the color matrix and TFT layout. The more pixels the higher detail is available.Available screen size, power consumption, resolution, interface (how to connect) define the TFT displays.

The pixels of TFT displays are determined by the underlying density (resolution) of the color matrix and TFT layout. The more pixels the higher detail is available. Available screen size, power consumption, resolution, interface (how to connect) define the TFT displays.

The TFT screen itself can’t emit light like OLED display, it has to be used with a back-light of white bright light to generate the picture. Newer panels utilize LED backlight (light emitting diodes) to generate their light and therefore utilize less power and require less depth by design.

Optical and SEM (scanning electron microscopy) images of fabricated (a, b) CL and (c, d) CLSE pixel structures. The five white line patterns in (d) are the ITO interdigitated pixel and common electrodes. (e) Images from the normal direction and from 50 degrees to the left and right of a 2.3-inch-diagonal display incorporating the IPS TFT-LCD panel. (f) The three-black matrix (BM) patterns (top: BM covering both gate and data lines, middle: BM covering only the data lines, and bottom: without BM) and (g) optical images of pixels without BM (left: LC on and off voltages supplied to every other data line, right: LC off voltage supplied to all data lines).

Figure 3e shows images from the normal direction and from 50 degrees to the left and right of a 2.3-inch-diagonal display incorporating the IPS TFT-LCD panel fabricated in our laboratory, (f) the three black matrix (BM) patterns (top: BM covering both gate and data lines, middle: BM covering only the data lines, and bottom: without BM), and (g) optical images of panel areas without the BM (left: LC on and off voltages supplied to every other data line, right: LC off voltage supplied to all data lines). As can be seen in the image from the normal direction, the brightness and contrast of the display area with the top BM and middle BM patterns are almost the same, but the contrast of the display area without the BM is relatively lower because of the lower darkness level of the LC off pixels indicating “HITACHI”. As shown in Fig. 3g, this is due to light leaking through the aperture between the data line and adjacent common lines. Therefore, in the CL structure, the BM on the drain line is necessary to obtain a high contrast ratio by shielding light leakage. This is the same as in the conventional structure. On the contrary, there is no light leakage along the gate line through the gaps between the gate line and edges of the pixel/common electrodes, as is clearly shown in Fig. 3g. This is a unique advantage of the CL structure because the conventional structure must shield these gaps with the BM to prevent light leakage. The suppression of light leakage along the gate line in the CL structure is due to the driving scheme (see Fig. 2b,a for a comparison with the conventional structure). During the holding period (tOFF) in the conventional structure, regardless of the pixel voltage, Vp (including Vp = 0), nonzero Vgp and Vgc are always applied to keep the TFT off, and these voltages are applied to the LC layer, inducing light leakage as reported in

Figure 4a shows the gate voltage (Vg) dependence of the panel brightness, while the inset shows that of the TFT current (transfer characteristics). The gray curves are for the conventional IPS TFT-LCD with the TFT before enhancement, the common line, and the matrix BM (MBM) shown at the top of Fig. 3f. The blue curves are for the proposed CL structure with the enhanced TFT and the stripe BM (SBM) shown in the middle of Fig. 3f. In this case, enhanced TFT characteristics were obtained by using an MNOS TFT without back-channel oxidation that was enhanced by the BTS process. In both structures, the threshold voltages for panel brightness, defined by extrapolating the straight part of the brightness curves, reflect those of the TFT transfer curves defined as Vg at a drain current of 10−12 A, and they are well matched to be 4 V and 9 V, respectively. The maximum brightness for the CL structure is 137% higher than that for the conventional structure, which is due to the increase in the aperture ratio from 38 to 52% that results from the elimination of the common line and the BM covering the gate line.

(a) Dependence of panel brightness and TFT current on gate voltage for the conventional pixel structure of 38% aperture ratio (AR) with matrix black matrix (MBM) over both drain and gate lines and proposed CL pixel structure of 52% AR with strip black matrix (SBM) over only the drain lines. Transfer characteristics before and after bias temperature stress (BTS) treatment are shown in the inset. (b) Charging and (c) holding characteristics of enhanced TFT of the CL structure with gate as a common line. Vg and Vd in the TFT ON state are 30 V and +/−7 V, respectively.

To estimate the charging and holding characteristics of the MNOS-enhanced TFT in the panel, the gate TFT ON and OFF time dependences of the panel brightness were measured (Fig. 4b,c). The charging characteristics in Fig. 4b are plotted as a function of tON at tOFF = 16.6 ms, Vg = 30 V, and Vd = ± 7 V. The holding characteristics in Fig. 4c are plotted as a function of tOFF at tON = 34 μs. 95.1% charging at tON = 34 μs and 95.3% holding at tOFF = 16.6 ms indicate that the enhanced TFT has sufficient charging and holding performance to drive a standard VGA (640 × 480 pixels) panel (the number of scanning lines is estimated as tOFF/tON = 16.6/0.034 = 488).

To confirm the driving conditions for the CL structure without the BM along the gate line (with the SBM), the tOFF dependence of the contrast ratio (CR) in the CL panel was further investigated as shown in Fig. 5a, where CR is plotted as a function of tOFF for the CL panels with the matrix BM (MBM) and the strip BM (SBM). The inset shows the brightness in the bright (Vd = 7 V) and dark (Vd = 0 V) states of the CL panel with the SBM as a function of tOFF and an optical image of the panel with tOFF = 6.4 ms. The SBM and MBM panels keep CR higher than 240 with tOFF > 16.6 ms, the frame period of a display panel without flicker being noticeable to the human eye. both panels decrease CR when tOFF is less than 16.6 ms; the CR of the SBM panel decreases faster than the CR of the MBM panel. As shown in the inset, the decrease in CR was due to the increase in dark-state brightness with decreasing tOFF as light leakage increases along the gate line. This light leakage is induced by the voltage Vgp = Vgc = VgON = 30 V applied only for 34 μs during the TFT ON (charging) state, which is 1/488th the duration, tOFF = 16.6 ms, of the TFT OFF (holding) state with Vgp = Vgc = VgOFF = 0 V, but the ratio increases with decreasing tOFF and becomes effective enough to switch on LC layer and induce light leakage. However, it should be stressed again that the CL panel with the normal holding (TFT OFF) time of 16.6 ms does not suffer from the light leakage along the gate line, so the aperture ratio can be increased by removing the BM along the gate line.

Figure 6 indicates the effect of bias temperature stress (BTS) on the TFT characteristics. As the stressing time, tS, of the positive gate stress voltage, Vst =  + 77 V, increases from 0 to 3600 s, the transfer (Id-Vg) curve shifts in the positive direction (Fig. 6a). Vth is defined as Vg at which Id = 10−12 A and ΔVth is defined as the Vth shift from the initial value via BTS. As shown in Fig. 6b, ΔVth increases logarithmically with increasing tS: ΔVth = 2.17 + 4.93 × log (tS). The mechanism behind the gate-stress-induced Vth shift is electron tunnel injection from the a-Si:H semiconductor into the SiOx gate insulator. For confirmation, ΔVth of MNOS TFTs with different SiOx thicknesses is plotted as a function of the electric field applied to the SiOx layer in Fig. 6c. Here, the thickness of the SiOx was varied (5, 10, 20, 50 nm), while the SiN thickness was fixed at 200 nm. The electric field applied to SiOx, Eox, was calculated using the following equation,

Effect of bias temperature stress (BTS) on TFT characteristics. (a) The transfer (Id–Vg) curve shifts in the positive direction with positive gate bias stress of Vst =  + 77 V over the duration of 0–3600 s. (b) ΔVth, defined as the Vth shift from the initial value via BTS, increases logarithmically with increasing tS, following ΔVth = 2.17 + 4.93 × log (tS). (c) ΔVth of MNOS TFTs with different SiOx thicknesses from 5 to 50 nm as a function of the electric field applied to the SiOx layer.

Figure 7a shows the effect of back-channel oxidation (BCO) and passivation (PAS) on the Id-Vg characteristics of the MNOS TFT. The Id-Vg curve with Vth = 5.1 V is further enhanced to Vth = 10.9 V after BCO, although there is a slight degradation of the slope of the current increase in the sub-threshold region. The slope recovers after PAS without any change to the enhanced characteristics

(a) Effect of back-channel oxidation (BCO) and passivation (PAS) on Id–Vg characteristics of MNOS TFT. (b) Vth and Vth standard deviation, σVth, after BTS and after BCO without BTS treatments and (c) SiOX thickness as a function of position along gate-line, x.

The advantage of BCO over BTS is the uniformity of the enhanced characteristics; Fig. 7b shows the distribution of the enhanced Vth as a function of position along gate-line, x, for the MNOS TFTs connected with a 90-mm-long gate line in the TFT substrate after BTS and BCO treatments. The average value of Vth and the standard deviation, σVth, for pristine TFTs before BTS or BCO, are 5.1 V and 0.35 V, respectively. After BCO, Vth is uniformly enhanced, with an average Vth = 11 V and σVth = 0.4 V without increasing σVth. On the other hand, after BTS, Vth is nonuniformly enhanced with an average Vth = 9.3 V and σVth of 1.4 V. In particular, Vth increases linearly as a function of position along gate-line, x. As the gate SiOx thickness linearly decreases, from (54 nm) to (47 nm) with increasing x as shown in Fig. 7c, the increase in ΔVth after BTS with x is due to increase in the electric field applied to SiOx as shown in Fig. 6c and Eq. 1.

It has been shown that the Vth of the MNOS TFT is independent of the gate SiOx thickness when the thickness is more than 5 nm8a, Vth of the MNOS TFT with the BCO treatment becomes almost independent of the BCO SiOx thickness. As shown in the inset, the thickness of BCO SiOx composed of oxidized a-Si:H linearly increases with BCO processing time, and the Vth increase almost saturates at a BCO SiOx thickness greater than 5 nm. Therefore, the enhanced MNOS TFT after BCO has a uniformly high Vth that is robust to thickness fluctuations of the gate and BCO SiOx layers. BCO also has an advantage over BTS in terms of the stability of Vth as shown in Fig. 8b, which plots the annealing time dependence of Vth for BCO and BTS. In this experiment, the stoichiometry (x) of the gate SiOx was 1.78 for BTS and 1.78 and 1.9 for BCO. The annealing temperature in the N2 atmosphere was 200 °C. In the case of BTS, Vth decreased to the pristine value after approximately 5 h of annealing, while Vth decreased more slowly in the case of BCO. In particular, the annealing time required for Vth to fall to 7 V was 7.5 times longer than that of BTS. Increasing the stoichiometry (x) of the gate SiOx dramatically improved the BCO-enhanced Vth to as much as 11 V, which was stably maintained after 24 h of annealing at 200 °C.

(a) Dependence of Vth on thickness of back-channel oxidized (BCO) SiOX. The inset shows the SiOx thickness dependence on the BCO process time for RF powers of 200 W and 500 W. (b) Stability of Vth as a function of annealing time for three different TFTs with gate SiOx stoichiometry, x = 1.78 and bias temperature stress (BTS), x = 1.78 and BCO, and x = 1.9 and BCO. The temperature of annealing in the N2 atmosphere was 200 °C. (c) Band diagram of back-channel oxidized MNOS TFT. The red arrows show the electric dipoles at the SiOX/a-Si:H and a-Si:H/BCO SiOX interfaces.

A schematic band model for the MNOS TFT with the BCO treatment and the sectional structure of the interface between the a-Si:H and gate and BCO SiOx are shown in Fig. 8c. The uniformly high Vth that is independent of SiOx thickness is due to the dipoles generated at the channel and back-channel interfaces between a-Si:H and SiOx8 of reference

Sharp demonstrated a fourteen-inch TFT-LCD for TV in 1988 when the display size of the mass-produced TFT-LCD was three inches. The high display quality in Cathode Ray Tube size convinced other electronic companies to join the infant TFT-LCD industry aimed at emerging full-color portable PCs. Two decades later, TFT-LCDs replaced CRTs, making the vision of RCA"s LCD group in the 1960s a reality.

Sharp Technology Innovation Museum is located in the premise of Sharp Technology Center where LCD research was started and culminated in mass-producing the world-first mini-calculator mounted with LCD and C-MOS logic : the calculator is displayed at the British Science Museum.

It showed that an ideal display, namely, a flat, low-power, light-weight, CRT-sized full-color video display ,which could be used also in high ambient light, is technologically feasible, and that is exactly what had been long waited for to be used in an emerging information age since LCD was press-released in 1968 by RCA.

3. A large mother glass scheme could work for a-Si-TFT-LCD, which was proved by the high display uniformity across the entire display area. The mother glass 300mm x 320mm was the very forerunner of the mother glass generation competition which started around 1990, 2 years after Sharp 14-in. full color TFT-LCD was demonstrated.

At the very beginning of a-Si-TFT-LCD business startup, this work clearly showed a-Si-TFT-LCD have the potential to replace monster CRT in the coming information age by its superior characteristics: flatness, light-weight, small power consumption, high saturation full-color rendition, high readability in high ambient light, realized on the 14-in. display size, the most dominant size in the contemporary market by using the technology which was developed to mass-produce twenty 3-in. TFT-LCD TV panels laid out on the mother glass of 300mm x 320mm dimensions.

TV business group knew the market and joined the development project from the very beginning and gave a clear display quality target to TFT-LCD research group to achieve and make the TFT-LCD a viable display technology against CRT dominance.

[114] T. Nagayasu, T. Oketani, T. Hirobe, H. Kato, S. Mizushima, H. Take, K. Yano, M. Hijikigawa, and I. Washizuka, “A 14-in-diagonal full color a-Si TFT LCD,” in Proc. Int. Display Research Conf., San Diego, CA, Oct. 1988, pp. 56–58.

[9] G. H. Heilmeier, “Liquid crystal displays: An experiment in interdisciplinary research that worked,” IEEE Trans. Electron Devices, vol. ED-23, July 1976.

A thin-film transistor liquid crystal display (TFT LCD) is a type of liquid crystal display (LCD) that makes use of thin-film transistor technology in order to improve qualities such as contrast and addressability. TFT technology means that an individual transistor is used to drive each individual pixel, allowing for faster response times.

Thin-film transistor liquid crystal display technology uses "field-effect" transistors, which are built by layering thin films on a glass substrate, hence the name. This technique is commonly used for creating microprocessors. The TFT in the LCD controls individual pixels in the display by setting the level of the electric field across the three liquid crystal capacitors (one for each sub-pixel of red, green and blue) in the pixel in order to control the polarization of the crystal material. The amount of polarization in the crystal determines the amount of light that reaches the color filter from the backlight. Because of this ability to directly and quickly control each pixel, TFT is also called active-matrix LCD technology.

A thin-film-transistor liquid-crystal display (TFT LCD) is a variant of a liquid-crystal display (LCD) that uses thin-film transistor (TFT) technology to improve image qualities such as addressability and contrast. A TFT LCD is an active-matrix LCD, in contrast to passive-matrix LCDs or simple, direct-driven LCDs with a few segments.

TFT LCDs are used in appliances including television sets, computer monitors, mobile phones, handheld video game systems, personal digital assistants, navigation systems and projectors.

TFT LCDs are also used in car instrument clusters because they allow the driver to customize the cluster, as well as being able to provide a skeuomorphic, analog-like display with digital elements.

In 1970, LCD displays incorporating thin-film transistors were demonstrated by J. Kishimoto at CanonSuwa Seikosha (Seiko).active matrix TFT LCD display was demonstrated by T Peter Brody"s team at Westinghouse Electric Corporation.Sharp Corporation in 1976

In 1980, Hattori Seiko"s R&D group began development on color pocket LCD televisions, which eventually led to the release of commercial TFT LCD displays by three of its subsidiaries.Citizen Watch, introduced the Citizen Pocket TV, a color TFT LCD handheld television,Seiko"s color micro-TV and the Epson ELF.

Sharp Corporation invented the first large color TFT LCD displays in 1986.computer monitors and LCD televisions. In the late 1990s, the LCD industry began shifting away from Japan, towards South Korea and Taiwan.

A thin-film transistor liquid crystal display, TFT LCD display for short, is a type of LCD display that uses thin-film transistor technology to improve image quality.

TFT LCD displays have many advantages over traditional LCD displays. While traditional LCDs use a single layer of transistors, TFT LCDs use a thin film of transistors. This allows for better image quality, as well as improved response time and lower power consumption. TFT LCDs are also thinner and lighter than traditional LCDs, making them ideal for use in portable devices.

When choosing a TFT LCD, it is important to consider the viewing angle and colour reproduction. While TFT IPS displays offer better image quality, they are also more expensive.

The thin-film transistor array is the layer of transistors that are made of a material such as silicon. The array of transistors is connected to the control circuitry. The control circuitry contains the drivers that control the voltage applied to the transistors.

The colour filter array is the layer of the LCD that contains the colour filters. The colour filters are made of dyes or pigments and are arranged in a specific pattern. The most common patterns are RGB (red, green, blue) and CMYK (cyan, magenta, yellow, black).

When a voltage is applied to the transistor array, the transistors turn on and allow light to pass through. This light is then converted into an image by the colour filter array.

TFT LCDs are used in a wide variety of industries, including consumer electronics, computing, telecommunications, automotive, and medical to name a few. Specifically, they are used in:Computers and laptop computers

The liquid crystal layer is the layer of the LCD that contains the liquid crystals. The liquid crystals are made of materials such as nematic or cholesteric.

The liquid crystals are arranged in a specific pattern. The most common patterns are twist nematic (TN), super twisted nematic (STN), and in-plane switching (IPS). The liquid crystals are aligned with the electric field and are controlled by the voltage applied to the electrodes.

When an electric field is applied, the liquid crystals twist. This twisting allows light of a specific color to pass through. The light is then modulated by the liquid crystal layer.

TFT LCDs use two types of cover glass. Rigid cover glass is made of either soda-lime glass or Gorilla Glass. Flexible cover glass is used in some TFT LCDs, such as those used in mobile phones. The flexible cover glass is more resistant to breakage than rigid cover glass, making it ideal for use in portable devices.

The backlight is the layer of the LCD that emits light. Backlights can be made up of light-emitting diodes (LEDs), an electroluminescent panel (ELP), cold cathode fluorescent lamps (CCFLs), and hot cathode fluorescent lamps (HCFLs), or external electrode fluorescent lamps (EEFLs).

The touchscreen is an optional part of the display module that allows the user to interact with the display. A touchscreen is a layer of glass that is coated with a material that is sensitive to pressure. When the user presses on the touchscreen, the pressure is registered and converted into an electrical signal.

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